IRFB4229PBF

The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

• Advanced process technology
• Low Qg for fast response
• High repetitive peak current capability for reliable operation
• Short fall and rise times for fast switching
• Repetitive avalanche capability for robustness and reliability