IRF7105PBF

Цена 20.00 руб.

Описание IRF7105PBF

The IRF7105PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON...

The IRF7105PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Advanced process technology
• Ultra low ON-resistance
• Surface-mount device
• Dynamic dV/dt rating
• Fast switching performance

Структура	n/p-канал
Максимальное напряжение сток-исток Uси	25/-25В
Максимальный ток сток-исток при 25 С Iси макс..А	3.5/-2.3
Максимальное напряжение затвор-исток Uзи макс.	-3В
Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id	0.1 ом при 1a, 10в/0.25 ом при-1a, -10вRds (on)
Максимальная рассеиваемая мощность Pси макс..Вт	2
Крутизна характеристики	3.1/4.3S
Корпус	so8
Пороговое напряжение на затворе	3/-3
Вес	0.15г