FGL60N100BNTD

Цена 350.18 - 958.32 руб.

Описание FGL60N100BNTD

The FGL60N100BNTD is a 1000V NPT Trench IGBT with high speed switching. It is in a non-punch through (NPT) IGBT desig...

The FGL60N100BNTD is a 1000V NPT Trench IGBT with high speed switching. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability This product is general usage and suitable for many different applications.

• Low saturation voltage
• High input impedance
• High speed switching
• Built-in fast recovery diode

Технология/семейство	npt trench
Наличие встроенного диода	да
Максимальное напряжение КЭ	1000В
Максимальный ток КЭ при 25°C	60A
Импульсный ток коллектора (Icm)	120А
Напряжение насыщения при номинальном токе	2.9В
Максимальная рассеиваемая мощность	180Вт
Время задержки включения (td(on)) при при 25°C	140нс
Время задержки выключения (td(off)) при при 25°C	630нс
Рабочая температура (Tj)	-55…+150°C
Корпус	TO-264
Вес	10г